Wafer‐Scale, Highly Uniform Surface Functionalization from Vapor Phase and Applications to Organic Transistors

The surface functionalization by self-assembled monolayers (SAMs) favors well-packed organic semiconductor growth and reduces interfacial traps, which assists in developing high-performance thin-film transistors (OTFTs). Herein, the conventional SAM from vapor phase is ameliorated systematically studied. With 1H,1H,2H,2H-Perfluorodecyltrichlorosilane as an example, it found that deposition temperature of no less than 120 °C pressure up to 0.02 bar preferred for without morphological defects. optimized SAMs are ultrasmooth with a roughness 0.09 nm can be escalated wafer scale. It verified condition universal other trichlorosilane species. Finally, shown OTFTs defect-free achieve average mobility 1.79 cm2 V−1 s−1 using dinaphtho(2,3-b:2′,3′-f)thieno(3,2-b)thiophene active layer, 2.06 times devices defective paces large-area electronics.